Au–Sn bonding material for the assembly of power integrated circuit module

Insulated gate bipolar transistor (IGBT) chips are the key components in high-temperature power electronic modules, which have to efficiently convert electricity between direct and alternating current. In this study, the eutectic Au–Sn (20 wt.% Sn) is successfully used to assemble IGBT chips and direct-bond-copper substrates by using solid liquid interdiffusion (SLID) bonding. During subsequent isothermal aging at 150, 200, and 240 °C, the microstructure evolution and growth kinetics of intermetallic compounds are investigated. Excellent thermal stability and mechanical strength are observed. It is concluded that the eutectic Au–Sn solder is ideal to assemble high-temperature IGBT by using the SLID process. - Highlights: • Au–20Sn serves as a promising bonding material for IGBT operating at T < 519 °C. • The Au–20Sn reacted with Ni to form (Ni,Au)₃Sn₂/(Au₅Sn + AuSn)/(Ni,Au)₃Sn₂. • Once the AuSn was nearly exhausted, the whole joint could withstand higher temperatures. • A cost-effective way for long-term operations at high temperature.