Published November 6, 2012
| Version v1
Journal article
Mass and charge overlaps in beamline implantation into compound semiconductor materials
- 1. Evans Analytical Group, 810 Kifer Rd., Sunnyvale, CA 95051 (United States)
- 2. Core Systems, 1050 Kifer Rd., Sunnyvale, CA 94086 (United States)
- 3. Current Scientific, 1729 Comstock Way, San Jose, CA 95124 (United States)
Description
Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be+ implants are examined as an example.
Additional details
Identifiers
- DOI
- 10.1063/1.4766567;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1496
- Journal Issue
- 1
- Journal Page Range
- p. 376-379
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 19. international conference on ion implantation technology
- Dates
- 25-29 Jun 2012
- Place
- Valladolid (Spain)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44034808
- Subject category
- S36: MATERIALS SCIENCE; S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM EXTRACTION; BERYLLIUM; BERYLLIUM IONS; CHARGE EXCHANGE; ELECTRIC ARCS; ION BEAMS; ION IMPLANTATION; PLASMA; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALKALINE EARTH METALS; BEAMS; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELEMENTS; IONS; MATERIALS; METALS
Optional Information
- Notes
- (c) 2012 American Institute of Physics