Published July 31, 2006
| Version v1
Journal article
Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering
Creators
- 1. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- 2. European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex (France)
- 3. Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany)
- 4. Institut fuer Kristallzuechtung, Max-Born-Strasse 2, D-12489 Berlin (Germany)
- 5. Martin-Luther-Universitaet Halle-Wittenberg, Fachbereich Physik, Hoher Weg 8, D-06120 Halle/Saale (Germany)
Description
The authors report on x-ray diffuse scattering at nominally strain-free GaAs(001) quantum dot molecules (QDMs). Al0.3Ga0.7As deposited by molecular beam epitaxy on GaAs(001) acts as barrier layer between the GaAs(001) substrate and subsequently grown QDMs; the adjusted thickness of 50 nm preserves the in-plane lattice parameter. Pairs of lenselike quantum dots are created with preferential orientation along [110] placed on shallow hills. Grazing incidence diffraction along with kinematical scattering simulations indicate completely strain-free QDs which prove a strongly suppressed intermixing between QDMs and the underlying AlGaAs barrier layer
Additional details
Identifiers
- DOI
- 10.1063/1.2240114;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 89
- Journal Issue
- 5
- Journal Page Range
- p. 053116-053116.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38023618
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTAL GROWTH; DIFFUSE SCATTERING; GALLIUM ARSENIDES; GRAIN ORIENTATION; LATTICE PARAMETERS; MOLECULAR BEAM EPITAXY; MOLECULES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SIMULATION; SUBSTRATES; TEXTURE; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MICROSTRUCTURE; NANOSTRUCTURES; ORIENTATION; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2006 American Institute of Physics