Pulse-height defect in the passivated ion-implanted Si detectors of the INDRA array
Creators
- Tabacaru, G.
- Borderie, B.
- Ouatizerga, A.
- Parlog, M.
- Rivet, M.F.
- Auger, G.
- Bacri, Ch.O.
- Bocage, F.
- Bougault, R.
- Brou, R.
- Buchet, Ph.
- Charvet, J.L.
- Chbihi, A.
- Colin, J.
- Cussol, D.
- Dayras, R.
- Demeyer, A.
- Dore, D.
- Durand, D.
- Ecomard, P.
- Frankland, J.D.
- Galichet, E.
- Genouin-Duhamel, E.
- Gerlic, E.
- Guinet, D.
- Lautesse, P.
- Laville, J.L.
- Fevre, A. Le
- Lefort, T.
- Legrain, R.
- Neindre, N. Le
- Lopez, O.
- Louvel, M.
- Nalpas, L.
- Nguyen, A.D.
- Plagnol, E.
- Rosato, E.
- Saint-Laurent, F.
- Salou, S.
- Squalli, M.
- Steckmeyer, J.C.
- Stern, M.
- Tassan-Got, L.
- Tirel, O.
- Vient, E.
- Volant, C.
- Wieleczko, J.P.
Description
The pulse-height defect (PHD) of 36Ar, 58Ni, 129Xe, 181Ta and 197Au ions in the 180 passivated ion-implanted silicon detectors of the INDRA array has been measured. The detectors faced the target with the low electric field side. The charge encoding ensured a low ballistic deficit. Detectors with the same nominal characteristics and electric field strength show a PHD dependence on the individual silicon wafer. They are classified and calibrated by using an empirical parametrization which relates the PHD to the total energy through a Z-depending power law. A PHD analytical formula, based on a simple recombination model, is also proposed. It considers a realistic charge density variation with the position coordinate on the ion path. This new formula is successfully confronted to some experimental data
Additional details
Identifiers
- PII
- S0168900299001680;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 428
- Journal Issue
- 2-3
- Journal Page Range
- p. 379-390
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34037929
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ARGON 36; ARGON IONS; CHARGE DENSITY; GOLD 197; GOLD IONS; ION IMPLANTATION; NICKEL 58; NICKEL IONS; PASSIVATION; SI SEMICONDUCTOR DETECTORS; TANTALUM 181; TANTALUM IONS; XENON 129; XENON IONS
- Descriptors DEC
- ARGON ISOTOPES; CHARGED PARTICLES; DAYS LIVING RADIOISOTOPES; EVEN-EVEN NUCLEI; EVEN-ODD NUCLEI; GOLD ISOTOPES; HEAVY NUCLEI; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; LIGHT NUCLEI; MEASURING INSTRUMENTS; NICKEL ISOTOPES; NUCLEI; ODD-EVEN NUCLEI; RADIATION DETECTORS; RADIOISOTOPES; SECONDS LIVING RADIOISOTOPES; SEMICONDUCTOR DETECTORS; STABLE ISOTOPES; TANTALUM ISOTOPES; XENON ISOTOPES
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.