Published 2011 | Version v1
Miscellaneous

Investigation of mesoporous structures for thermoelectric applications

  • 1. Inst. for Materials Science, Christian-Albrechts-Univ. of Kiel. Kaiserstr. 2, D-24143 Kiel, (Germany)
  • 2. Max-Planck-Inst. of Microstructure Physics Weinberg 2, D-06120 Halle, (Germany)

Description

Mesoporous silicon is an attractive material for thermoelectric application. For pore wall thicknesses around <100 nm, phonons can not penetrate the porous layer while electrons still can, due to there smaller mean free path length. The resulting good electrical and bad thermal conductivity is a premise for efficient thermoelectric devices. This paper presents results regarding homogeneity, high porosity, and optimal pore wall thicknesses for porous silicon based thermoelectric devices.

Part of:
ICNBME-2011: International Conference on Nanotechnologies and Biomedical Engineering; German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications. Proceedings

Additional details

Publishing Information

Publisher
Technical University of Moldova
Imprint Place
Chisinau (Moldova, Republic of)
ISBN
978-9975-66-239-0
Imprint Title
ICNBME-2011: International Conference on Nanotechnologies and Biomedical Engineering; German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications. Proceedings
Imprint Pagination
460 p.
Journal Page Range
p. 21-23
Report number
INIS-MD--008

Conference

Title
International Conference on Nanotechnologies and Biomedical Engineering; German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications. Proceedings
Acronym
ICNBME-2011
Dates
7-8 Jul 2011
Place
Chisinau (Moldova, Republic of)

INIS

Country of Publication
Moldova, Republic of
Country of Input or Organization
Moldova, Republic of
INIS RN
42086284
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL MACHINING; ETCHING; N-TYPE CONDUCTORS; PHYSICAL PROPERTIES; POROSITY; POROUS MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES
Descriptors DEC
CHEMICAL MACHINING; ELECTRICAL PROPERTIES; ELEMENTS; MACHINING; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SURFACE FINISHING; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES

Optional Information

Notes
14 refs., 5 figs.