Current diffusion and efficiency droop in vertical light emitting diodes
- 1. State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083 (China)
- 2. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes (LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect (CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency (IQE), light extraction efficiency (LEE), and external quantum efficiency (EQE) droop of the lateral LEDs. However, questions still exist for the vertical LEDs (V-LEDs). Here firstly the current diffusion length L s(I) and L s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L s(III) was developed by combining L s(I) and L s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency (WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/28/1/017203Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 28
- Journal Issue
- 1
- Journal Page Range
- [9 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52030135
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIFFUSION; DIFFUSION LENGTH; EXTRACTION; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY
- Descriptors DEC
- DIMENSIONS; EFFICIENCY; LENGTH; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEPARATION PROCESSES