Influences of elevated thermal decomposition of ammonia gas on indium nitride grown by sol–gel spin coating method

Highlights: • A study on indium nitride growth via sol-gel spin coating and nitridation. • Thermal decomposition effects of ammonia gas on films properties are investigated. • Chemical processes describing InN crystal growth are revealed. • Thermal etching effect and metallic indium are observed at increasing temperature. • New insights in synthesizing InN thin films with a simple and low cost method. - Abstract: Indium nitride (InN) thin films grown on aluminum nitride on p-type silicon (111) [AlN/p-Si(111)] substrates are prepared via sol–gel spin coating method followed by nitridation. The thermal decomposition effects of ammonia (NH₃) gas on the structural properties and surface morphologies of the deposited films are investigated. X-ray diffraction results reveal that the crystalline quality of InN degrades markedly as thermal decomposition of NH₃ gas increases from 700 to 850 °C, at which indium oxide (In₂O₃) forms in the deposited films. The thermal etching effect and formation of indium droplet on the film are observed at 850 °C. These findings are consistent with those of elementary and cross-sectional analysis obtained through energy dispersive spectroscopy and field-emission scanning electron microscopy. The findings deduced that InN thin films with densely packed grains can be grown at NH₃ decomposition temperature of 700 °C.