Published August 15, 1986
| Version v1
Journal article
Initial stage of thermal oxidation of the Si(111)-(7 x 7) surface
Creators
- 1. Atsugi Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 Japan
Description
We report a systematic study of the early oxidation process in a wide temperature range (20--700XdeC) for the Si(111)-(7 x 7) annealed surface. Oxygen uptake data obtained by Auger-electron spectroscopy indicate that the surface oxygen uptake increases and then gradually saturates with O2 exposure at 20XdeC. At intermediate temperatures, there is no saturation and the oxygen uptake rate is enhanced. At 700XdeC, the uptake rate is enhanced in the high-exposure (or high-O2-pressure) region, but is significantly reduced in the low-exposure region, presumably because of oxygen desorption as volatile SiO
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 34
- Journal Issue
- 4
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 2706-2717
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17087337
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; HIGH TEMPERATURE; MEDIUM TEMPERATURE; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACES; SYNCHROTRON RADIATION; ULTRAHIGH VACUUM; ULTRAVIOLET RADIATION; X RADIATION
- Descriptors DEC
- BREMSSTRAHLUNG; CHEMICAL REACTIONS; COHERENT SCATTERING; DATA; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; HEAT TREATMENTS; INFORMATION; IONIZING RADIATIONS; NUMERICAL DATA; RADIATIONS; SCATTERING; SEMIMETALS; SPECTROSCOPY