Published September 2019 | Version v1
Journal article

Electronic structures, mechanical properties and defect formation energies of U3Si5 from density functional theory calculations

  • 1. College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, Heilongjiang (China)
  • 2. Engineering Laboratory of Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China)
  • 3. Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, 87545 (United States)
  • 4. School of Material and Engineering, Harbin University of Science and Technology, Harbin, 150040 (China)

Description

Highlights: • The superstructure of U3Si5 was determined to be a distortion defect β-USi2. • Theoretical results indicate that the U3Si5 is a metallic and brittle material. • The chemical bonds in U3Si5 are found similar with those of U3Si2. • The silicon defects have lower formation energy and are not prone to cluster. • In addition to the single vacancy, other point defects volumes are expanding. -- Abstract: The uranium silicide U3Si5 has been utilized as the second phase in the UN-U3Si5 composite fuel. However, there have thus far been few theoretical investigations on its microscopic structure and mechanical behaviors. In this work, the electronic structures, elastic mechanical properties, Debye temperature and defect formation energies of U3Si5 are systematically studied by density functional theory. The crystalline structure of U3Si5 is determined to be a defective β-USi2 with a distorted lattice, in good agreement with the experimental observations. The theoretical results indicate that the U3Si5 is a metallic and brittle material and the chemical bonds in U3Si5 are found similar with those of U3Si2. We have also calculated formation energies of different types of point defects: vacancies, interstitials, and Frenkel pairs in U3Si5. The smaller Si atoms exhibit lower defect formation energies than U atoms with an isolated Si or U atom as the reference. Besides, the silicon vacancies are not prone to cluster. The volumes of supercells with interstitial and Frenkel pair defects are found to increase but single vacancies cause an opposite trend. This work may provide theoretical insights into the behavior of uranium silicide materials under irradiation.

Additional details

Identifiers

DOI
10.1016/j.pnucene.2019.03.045;
PII
S0149197019301106;

Publishing Information

Journal Title
Progress in Nuclear Energy
Journal Volume
116
Journal Page Range
p. 87-94
ISSN
0149-1970
CODEN
PNENDE

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Copyright
Copyright (c) 2019 Elsevier Ltd. All rights reserved.