Correlations between the microstructure of Ag-Si3N4 multilayers and their optical properties
Description
Ag-Si3N4 multilayers with nominal Ag thickness of 1 nm and Si3N4 thickness ranging from 3 to 12 nm were elaborated by dual ion beam sputtering. The nanocomposite films were analyzed by transmission electron microscopy, grazing incidence small-angle X-ray scattering and spectroscopic ellipsometry. Optical properties exhibit surface plasmon resonance (SPR) coming from an enhancement of the electrical field inside Ag nanoclusters. The SPR spectral position has been related to the oblate shape of the nanoclusters. Furthermore, it is shown that a modification of the magnitude of the multipolar electromagnetic interactions among clusters occurs when the in-depth dielectric separation of the Ag layers varies from H to 2H, where H is the height of the nanoclusters
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2004.01.080;
- PII
- S0040609004000173;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 455-456
- Journal Issue
- 3
- Journal Page Range
- p. 313-317
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 3. international conference on spectroscopic ellipsometry
- Dates
- 6-11 Jul 2003
- Place
- Vienna (Austria)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37016817
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTROMAGNETIC INTERACTIONS; ELLIPSOMETRY; FILMS; ION BEAMS; LAYERS; MICROSTRUCTURE; NANOSTRUCTURES; OPTICAL PROPERTIES; SILICON NITRIDES; SILVER; SMALL ANGLE SCATTERING; SPUTTERING; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- BASIC INTERACTIONS; BEAMS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; ELEMENTS; INTERACTIONS; MATERIALS; MEASURING METHODS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SILICON COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.