Published June 2009 | Version v1
Journal article Metadata-only

Electrical properties of InGaN-Si heterojunctions

Creators

  • 1. Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, CA 94720 (United States)
  • 2. Departments of Chemistry and Physics, University of California at Berkeley, Berkeley, CA 94720 (United States)
  • 3. Department of Electrical Engineering and Computer Science, Cornell University, Ithaca, NY 14853 (United States)

Description

The electrical transport properties of n-InxGa1-xN heterojunctions with Si(111) were investigated. InGaN films were grown by molecular beam epitaxy and either an AlN or Si3N4 buffer layer was used. For x in the range of 15-45%, an ohmic junction is obtained with p-type Si and a rectifying junction is formed with n-type Si. The n-InGaN/n-Si heterojunction device functions as a solar cell. The series resistance is lower and the power conversion efficiency is higher for InGaN devices grown with an AlN buffer layer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200880967

Additional details

Identifiers

DOI
10.1002/pssc.200880967;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
Suppl.2
Journal Page Range
p. S413-S416
ISSN
1862-6351

Conference

Title
International workshop in nitride semiconductors (IWN 2008)
Dates
6-10 Oct 2008
Place
Montreux (Switzerland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40070466
Subject category
S36: MATERIALS SCIENCE; S14: SOLAR ENERGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM NITRIDES; ELECTRIC CONDUCTIVITY; ENERGY CONVERSION; ENERGY EFFICIENCY; FILMS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SILICON; SILICON NITRIDES; SILICON SOLAR CELLS; SURFACES
Descriptors DEC
ALUMINIUM COMPOUNDS; CONVERSION; CRYSTAL GROWTH METHODS; DIRECT ENERGY CONVERTERS; EFFICIENCY; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT

Optional Information

Notes
With 4 figs., 3 tabs., 21 refs.; SICI: 1862-6351(200906)6:5+<::AID-PSSC200880967>3.0.TX;2-T