Published 1989
| Version v1
Journal article
Magneto-optical and ODMR investigations on intrinsic and extrinsic defects in GaAs
Description
Optically detected magnetic resonance using the magnetic circular dichroism (MCD) of the absorption can be successfully applied to the study of the atomic structure of defects in III-V semiconductors. The potential of this technique and important results will be discussed with respect to the ground and excited state properties of intrinsic and extrinsic defects. (author) 19 refs., 6 figs
Additional details
Additional titles
- Augmented title (English)
- ODMR (Optically detected magnetic resonance)
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 59-66
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20053753
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; ELECTRONIC STRUCTURE; ENDOR; EXCITED STATES; GALLIUM ARSENIDES; GROUND STATES; MAGNETO-OPTICAL EFFECTS; SEMICONDUCTOR MATERIALS; SPIN
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ENERGY LEVELS; GALLIUM COMPOUNDS; MAGNETIC RESONANCE; MATERIALS; PARTICLE PROPERTIES; RESONANCE