Published August 11, 2003
| Version v1
Journal article
Magnetron-type radio-frequency plasma control yielding vertically well-aligned carbon nanotube growth
Creators
- 1. Department of Geoscience and Technology, Tohoku University, Sendai 980-8579 (Japan)
- 2. Department of Electronic Engineering, Tohoku University, Sendai 980-8579 (Japan)
Description
In order to understand the effects of plasma parameters on the nanotube formation and further controlled growth, we have investigated the optimal growth condition using a rf plasma-enhanced chemical vapor deposition method. The magnetic field introduced for a magnetron discharge enhances the nanotube growth as a result of the plasma-density increment and the self-bias reduction of a rf electrode. It is also found that the optimum ion flux and ion bombardment energy is a key parameter for the uniform, well-aligned, and density-controlled nanotube growth
Additional details
Identifiers
- DOI
- 10.1063/1.1601303;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 83
- Journal Issue
- 6
- Journal Page Range
- p. 1119-1121
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048205
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CARBON; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; MAGNETIC FIELDS; MAGNETRONS; NANOTUBES; OPTIMAL CONTROL; PLASMA; PLASMA DENSITY; REDUCTION; RF SYSTEMS
- Descriptors DEC
- CHEMICAL COATING; CHEMICAL REACTIONS; CONTROL; DEPOSITION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NANOSTRUCTURES; NONMETALS; SURFACE COATING
Optional Information
- Notes
- (c) 2003 American Institute of Physics.