Secondary processes in formation and annealing of radiation defects in KBr

Formation and annealing of long-lived Frenkel defects in KBr are studied within the 4.2-80 K range as a function of absorbed radiation dose using the absorption method. New manifestations of secondary processes of interaction of primary defects with each other and electronic excitations are obtained: the stage of annealing of H- and F centers at 12-15 K is conditioned by recombination of reoriented H-centers with F-centers of neighbouring F-, H-pairs; a sharp decrease (beginning from 10 K) of the efficiency of radiation formation of H-, Vsub(k) and F-centers in the region of mobility of 1-centers instead of H-centers is conditioned by a capture of electrons with immovable H-centers with their following transformation to movable I-centers. Formation of secondary processes is discussed with provision for the role of secondary combinations of defects (F, H, Vsub(k)-thriplets)