Structural defects in monocrystals of CuInSe2 irradiated by electrons

Point type radiation defects, that are effective channels of nonequilibrium carrier radiative recombination, are obtained for the first time. It is determined that radiation defects cause appearance of relatively strong W1∼1.0215 eV, W2∼1.0102 eV and W3∼0.9909 eV lines in photoluminescence spectra. It is discovered that changes in optical properties of high-quality single crystals of CuInSe2 occur at low dose electron irradiation ∼5x1015 cm-2. It is surmised that intrinsic structural defects, formed in CIS single crystals at electron irradiation, are responsible for radiative recombination centre formation