Fabrication of L10-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions
Creators
- 1. Department of Applied Physics, Graduate school of Engineering, Tohoku University, Aza-aoba 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)
- 2. WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
Description
Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L10-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L10-ordered structure. The L10-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization Ms of 600 emu/cm3 and perpendicular magnetic anisotropy Ku of 1.0 x 107 erg/cm3 was obtained using the Mn48Al52 target at deposition temperature of 200 deg. C and post-annealing temperature of 450 deg. C.
Additional details
Identifiers
- DOI
- 10.1063/1.3676428;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 111
- Journal Issue
- 7
- Journal Page Range
- p. 07A324-07A324.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
Conference
- Title
- 55. annual conference on magnetism and magnetic materials
- Dates
- 14-18 Nov 2010
- Place
- Atlanta, GA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129290
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ALLOYS; ANISOTROPY; ANNEALING; DEPOSITION; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MAGNETIZATION; MANGANESE ALLOYS; MONOCRYSTALS; SUBSTRATES; SURFACES; THIN FILMS; TUNNEL EFFECT; X-RAY DIFFRACTION
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; FILMS; HEAT TREATMENTS; MAGNESIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- (c) 2012 American Institute of Physics