Published April 2010
| Version v1
Journal article
Improved dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes
- 1. Korea University, Seoul (Korea, Republic of)
- 2. Nano-bio and Medical Appliance Research Center, KETI, Seongnam (Korea, Republic of)
Description
We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 x 10-7 Ωcm2, 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 56
- Journal Issue
- 41
- Series
- 19 refs, 6 figs, 1 tab
- Journal Page Range
- p. 1287-1290
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 44050250
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM COMPLEXES; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; ELECTRODES; ELECTRON MOBILITY; GALLIUM NITRIDES; GOLD; NICKEL; TITANIUM; TRANSISTORS
- Descriptors DEC
- COMPLEXES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; METALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSITION ELEMENTS