Investigation of electron exposure impact on process of radiation damage formation in silicon structures

The method of capacitive spectroscopy and transient responses are used to investigate distinctive features of radiation damage formation in silicon p+-n-n+ structures under different temperatures and intensive electron radiation. The structures were produced out of n-type silicium with ρ=0.3/10 Ohm, using a method of boron and phosphorous thermodiffusion under temperature of 1150 C degree during 17 hours. The process of radiation damage formation was studied within the fluence range of 1013/1016 cm-2 and the speed of 1011/5·1012 cm-2 sec-1. The irradiation temperature was within 25 C degree-450 C degree. It was shown that the VA and time responses for the structures irradiated under T>350 C degree were basically specified by levels, which are as follows: Ec-0.12, Ec-0.2 and Ec-0.35 eV