Published June 1982 | Version v1
Journal article Metadata-only

Ion implantation of impurities in n-Hgsub(0.8)Cdsub(0.2)Te

Creators

  • 1. AN SSSR, Moscow. Fizicheskij Inst.

Description

Determination of characteristic parameters of the n-Hgsub(0.8)Cdsub(0.2)Te surface layer subjected to Al+ and Ga+ group 3 ion implantation has been performed when using the optical method of the infrared reflection. It is shown that directly after the ion implantation the implantation effects result mainly from radiation defects. The chemical nature of the implanted impurity is revealed after the thermal annealing. Effects caused with the implantation of 2 and 3 group impurities are compared

Additional details

Additional titles

Subtitle (English)
2. Third group ions Al"+, Ga"+
Original title (Russian)
Ионная имплантация примесей в н-Хгсуб(0.8)Cдсуб(0.2)Те
Original subtitle (Russian)
2. Iony 3 gruppy Al"+,Ga"+.

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
16
Journal Issue
6
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
972-977
ISSN
0015-3222

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
14739199
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM IONS; ANNEALING; CADMIUM ALLOYS; CARRIER DENSITY; GALLIUM IONS; INFRARED RADIATION; ION IMPLANTATION; KEV RANGE 100-1000; MERCURY ALLOYS; N-TYPE CONDUCTORS; POINT DEFECTS; RADIATION DOSES; REFLECTION; SOLID SOLUTIONS; TELLURIDES
Descriptors DEC
ALLOYS; ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISPERSIONS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; IONS; KEV RANGE; MATERIALS; MIXTURES; RADIATIONS; SEMICONDUCTOR MATERIALS; SOLUTIONS; TELLURIUM COMPOUNDS

Optional Information

Notes
For English translation see the journal Soviet Physics - Semiconductors (USA).