Interaction of tellurium and telluriumcontaining semiconductor compounds with nitric acid solutions of hydrobromic acid

The kinetics of Te, CdTe, HgTe and CdxH1-xTe dissolution in HBr-HNO3-H2O system solutions are investigated in reproducible hydrodynamic conditions using a rotating disc. As a result of experimental investigations and physical and chemical modelling of the etching process, it is established that cadmium telluride dissolution rate in nitric acid solutions of hydrobromic acid is determined by the dissolution rate of tellurium which is formed on its surface. Mercury and not tellurium primarily affects the dissolution of mercury-containing semiconductor compounds in the studied solvents; it is caused by the passivation of the surface by mercury dibromide which is formed as a result of such interaction and which transforms into mercury oxide as a result of hydrolysis