Published December 15, 1983
| Version v1
Journal article
Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO2
- 1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Description
We describe a method of controlling the in-plane <100> directions of grains in (100)-textured silicon films produced by zone-melting recrystallization over amorphous SiO2. Grains having in-plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 43
- Journal Issue
- 12
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 1126-1128
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16045196
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; FILMS; FILTERS; GRAIN ORIENTATION; OPTIMIZATION; RECRYSTALLIZATION; SILICON; SILICON OXIDES; ZONE MELTING
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELEMENTS; MELTING; MICROSTRUCTURE; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; SEMIMETALS; SILICON COMPOUNDS