Published May 2008 | Version v1
Journal article Metadata-only

The fabrication of silicon-based PZT microstructures using an aerosol deposition method

Creators

  • 1. Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China)
  • 2. Department of Mechanical Engineering, Yuan Ze Fuel Cell Center, Yuan Ze University, Taoyuan, Taiwan (China)
  • 3. Advanced Manufacturing Research Center, Department of Mechatronic Engineering, Huafan University, Taipei, Taiwan (China)
  • 4. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan (China)
  • 5. Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, Taiwan (China)

Description

This paper presents a series of processes for fabricating lead-zirconate-titanate (PZT) microstructures on a silicon substrate. An aerosol deposition method was used to deposit PZT thick film at room temperature. The low temperature deposition enabled a special lift-off process for patterning thick PZT films using a THB-151N photoresist. The milling rate of THB-151N by PZT particles was found to be the same as the PZT deposition rate of 5 μm h−1. Using this patterning technique, complex configurations of PZT microstructures have been demonstrated. Suspended multi-layer PZT microstructures have also been realized in this work

Availability note (English)

Available from http://dx.doi.org/10.1088/0960-1317/18/5/055034

Additional details

Identifiers

DOI
10.1088/0960-1317/18/5/055034;
PII
S0960-1317(08)60432-5;

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
18
Journal Issue
5
Journal Page Range
[7 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44099519
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AEROSOLS; DEPOSITION; DEPOSITS; FABRICATION; FILMS; LAYERS; MICROSTRUCTURE; MILLING; PZT; SILICON; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
COLLOIDS; DISPERSIONS; ELEMENTS; LEAD COMPOUNDS; MACHINING; OXYGEN COMPOUNDS; SEMIMETALS; SOLS; TEMPERATURE RANGE; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS