Published June 1994
| Version v1
Journal article
Photoluminescence from nano-crystallites of silicon films prepared by PECVD
Creators
- 1. Nanjing Univ., JS (China). Dept. of Physics
Description
The observation of visible photoluminescence (PL) at room temperature from nano-crystallites of silicon films is reported, which are prepared in a PECVD system by using strong hydrogen diluted silane as the reactant gas source, without any post-processing. We attribute the PL to the photons above the band gap of bulk crystal silicon created by the carriers in the nano-crystallites under the function of quantum size effect. The effective deposition parameters are concerned
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 43
- Journal Issue
- 6
- Journal Page Range
- p. 985-990.
- ISSN
- 1000-3290
- CODEN
- WLHPAR
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26043777
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTALS; GRAIN SIZE; PARAMETRIC ANALYSIS; PHOTOLUMINESCENCE; PLASMA; SILANES; SILICON; THIN FILMS
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL STRUCTURE; DEPOSITION; ELEMENTS; EMISSION; FILMS; HYDRIDES; HYDROGEN COMPOUNDS; LUMINESCENCE; MICROSTRUCTURE; PHOTON EMISSION; SEMIMETALS; SILICON COMPOUNDS; SIZE; SURFACE COATING