Contribution of the electron subsystem of crystal into reactions between multicharge centers in semiconductors

The reactions of defect-complex formation in semiconductors is considered. The contribution of the electron subsystem of a crystal into the reaction rate is considered in terms of an additional change in the energy barrier of reaction. The comparison of the results of calculation with the experimental data is carried out for the case of the accumulation of the radiation-induced A- and E-centers in silicon. Satisfactory agreement between theoretical and experimental results gives evidence in favor of the suggested mechanism of participation of electron subsystem of a crystal in the processes in an atomic subsystem