Nature of Ec-0.37 eV centers and the formation of high-resistivity layers in n-type silicon

The DLTS and Van der Pauw methods are used to investigate the production of Ec-0.37 eV centers responsible for the formation of high-resistivity layers in n-type Si irradiated with electrons and annealed in the temperature range 80-320 deg. C. An analysis of the experimental data leads to a conclusion as to the composition of the Ec-0.37 eV centers ([V-O-C]) and to the conclusion that their formation is stimulated by a flux of interstitial atoms away from the interface into the interior of the semiconductor during annealing accompanied by the reactions: 1) I+Cs→Ci,Ci+[V-O]→[V-O-C] (dominant reaction); 2) I+V2→V,V+[C-O]→[V-O-C]