Published October 1974
| Version v1
Book
Use of ion implantation for creating a P well in N silicon: realization of complementary transistors
- 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Lab. d'Electronique et de Technologie de l'Informatique
- 2. Societe Europeenne des Semiconducteurs et Microelectroniques (SESCOSEM), 75 - Paris (France)
- 3. Thomson-CSF, 75 - Paris (France)
Description
Circuits involving complementary MOS transistors were obtained by simultaneously realizing P and N MOS transistors on the same substrate from predeposition by ion implantation
Abstract (French)
Des circuits a transistors MOS complemetaires ont ete obtenus en realisant sur le meme substrat des transistors MOS a canal P et a canal N a partir d'une predeposition par implantation ioniqueAdditional details
Additional titles
- Original title (French)
- Utilisation de l'implantation ionique pour la creation d'un caisson P dans du silicium N: realisation de transistors complementaires
Publishing Information
- Publisher
- Societe Francaise du Vide.
- Imprint Place
- Paris, France
- Imprint Title
- Electron and ion beam processes applications. 4. International congress AVISEM 74. Toulouse, October 8-11, 1974
- Imprint Pagination
- p. 278-284.
Conference
- Title
- 4. International congress AVISEM 74. Application of electronic and ionic processes.
- Dates
- 08 Oct 1974.
- Place
- Toulouse, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 7240498
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FABRICATION; ION IMPLANTATION; MOS TRANSISTORS; PERFORMANCE
- Descriptors DEC
- SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- Imprint:Supplement to the journal Le Vide les Couches Minces no. 171.;Application des processus electroniques et ioniques. 4. Congres international AVISEM 74. Toulouse, 8-11 Octobre 1974.