Localization and mobility of oxygen in monocrystalline GaAs by channeling-NRA

16O was implanted into monocrystalline GaAs. The maximum concentration was determined to be 2.2 x 1019 cm-3 in a depth of 2.4 μm. The samples were tempered at 400 and 500 C for 10, 20, 30 and 40 min. The lattice location of the implanted oxygen was determined in combining the channeling technique with nuclear reaction analysis (CHANRA). Angular scans were performed in the left angle 100 right angle direction of GaAs using the 16O(d, p0)17O reaction with an incident deuterium energy of 1.85 MeV. For the evaluation of the experimental data stopping power and ion flux distributions in the crystal channels were simulated as a function of the incident angle with the program MABIC (materials analysis by ion channeling). It was found that the oxygen is occupying interstitial and substitutional sites after implantation. Oxygen is disappearing from the substitutional sites during thermal annealing and an equilibrium of two interstitial sites, in the center of the channel and with an average distance of 0.06 nm from the lattice atoms is established. (orig.)