Characteristics of low-temperature-annealed ZnO-TFTs
Creators
- 1. Korea Maritime University, Busan (Korea, Republic of)
- 2. Dong Eui University, Busan (Korea, Republic of)
- 3. Busan National University, Miryang (Korea, Republic of)
Description
We investigated the effects of low-temperature annealing at 300 .deg. C and 500 .deg. C in air and N2 on the electrical characteristics of ZnO thin-film transistors (TFTs). The ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency (RF) sputtering at room temperature. A low-temperature oxide (LTO) served as the gate dielectric. Unannealed ZnO-TFTs were operated in the enhancement mode with a threshold voltage of 13.7 V. A field-effect mobility of 0.024 cm2/Vs and an on-off current ratio of 2 x 102 were obtained. Low-temperature annealing of the ZnO TFTs in an N2 atmosphere reduced the threshold voltage of the TFTs to 12.5 V and increased the field-effect mobility to 0.047 cm2/Vs and the on-off current ratio to 2 x 103.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 56
- Journal Issue
- 12
- Series
- 15 refs, 6 figs, 2 tabs
- Journal Page Range
- p. 404-408
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 44036302
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; DEPOSITION; ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTORS; MATERIALS TESTING; MOBILITY; SILICON; SPUTTERING; THIN FILMS; TRANSISTORS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FILMS; HEAT TREATMENTS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; TESTING; TRANSISTORS; ZINC COMPOUNDS