Published November 14, 2015
| Version v1
Journal article
Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers
- 1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
- 2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Description
We report room-temperature (RT) electroluminescence (EL) from InAs/InAsxP1−x quantum well (QW) light-emitting diodes (LEDs) over a wide wavelength range of 2.50–2.94 μm. We demonstrate the ability to accurately design strained InAs QW emission wavelengths while maintaining low threading dislocation density, coherent QW interfaces, and high EL intensity. Investigation of the optical properties of the LEDs grown on different InAsxP1−x metamorphic buffers showed higher EL intensity and lower thermal quenching for QWs with higher barriers and stronger carrier confinement. Strong RT EL intensity from LEDs with narrow full-width at half-maximum shows future potential for InAs QW mid-infrared laser diodes on InAsP/InP
Additional details
Identifiers
- DOI
- 10.1063/1.4935418;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 18
- Journal Page Range
- p. 183101-183101.7
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47063036
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BUFFERS; CARRIERS; DISLOCATIONS; ELECTROLUMINESCENCE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LASERS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; QUANTUM WELLS; QUENCHING; STRAINS; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; INDIUM COMPOUNDS; LINE DEFECTS; LUMINESCENCE; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC