Published October 31, 2011 | Version v1
Journal article

Measuring the Stokes parameters of radiation of semiconductor lasers

  • 1. P N Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation)

Description

We have developed and tested an original method for measuring the Stokes parameters for semiconductor lasers, based on the binding of the coordinate system to the test sample. The proposed method, when using an arbitrary phase plate as a compensator, allows one to measure the polarisation characteristics of lasers operating in a wide range of wavelengths - from 600 to 1000 nm. Application of the Fourier analysis to the quasi-continuous experimental data obtained with the help of automated systems of acquisition and processing of measurement results and ordinary optical elements provides accuracy that is sufficient to record the peculiarities of the polarisation characteristics of modern laser diodes.

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2011v041n10ABEH014699

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
41
Journal Issue
10
Journal Page Range
p. 869-874
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44003104
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ACCURACY; FOURIER ANALYSIS; PERFORMANCE; POLARIZATION; SEMICONDUCTOR LASERS; STOKES PARAMETERS; WAVELENGTHS
Descriptors DEC
LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS