Published 1995 | Version v1
Miscellaneous Open

Model for the electronic stopping power of channeled ions in silicon around the stopping power maximum

  • 1. Technische Univ., Vienna (Austria)
  • 2. Fraunhofer Institut fur Integrierte Schaltungen, Erlanden (Germany)

Description

Short communication

Files

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Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 4002.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28080365
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
HELIUM; ION CHANNELING; ION IMPLANTATION; MATHEMATICAL MODELS; PHOSPHORUS; SELENIUM; SILICON; STOPPING POWER
Descriptors DEC
CHANNELING; ELEMENTS; NONMETALS; RARE GASES; SEMIMETALS

Optional Information