Published 1995
| Version v1
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Model for the electronic stopping power of channeled ions in silicon around the stopping power maximum
- 1. Technische Univ., Vienna (Austria)
- 2. Fraunhofer Institut fur Integrierte Schaltungen, Erlanden (Germany)
Description
Short communication
Files
28080365.pdf
Files
(24.1 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 4002.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080365
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- HELIUM; ION CHANNELING; ION IMPLANTATION; MATHEMATICAL MODELS; PHOSPHORUS; SELENIUM; SILICON; STOPPING POWER
- Descriptors DEC
- CHANNELING; ELEMENTS; NONMETALS; RARE GASES; SEMIMETALS