Published October 1996 | Version v1
Journal article

Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis

  • 1. Argonne National Laboratory, Materials Science and Chemistry Divisions, Argonne, Illinois 60439 (United States)
  • 2. University of North Carolina, Chemistry Department, Chapel Hill, North Carolina 27599-3290 (United States)
  • 3. Northwestern University, Department of Materials Science, Evanston, Illinois 60208 (United States)
  • 4. MCNC, Electronic Technologies Division, 3021 Cornwallis Rd., Research Triangle Park, North Carolina 27709-2889 (United States)

Description

In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors. copyright 1996 American Institute of Physics

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
69
Journal Issue
18
Journal Page Range
p. 2671-2673.
ISSN
0003-6951
CODEN
APPLAB