Published May 1985
| Version v1
Journal article
Effect of low-energy electron irradiation on the hole mobility in near-surface channels of MIS-structures
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние облучения электронами низких энергий на подвижност' дырок в приповерхностных каналах кремниевых MDP-структур
Publishing Information
- Journal Title
- Mikroehlektronika
- Journal Volume
- 14
- Journal Issue
- 3
- Series
- Mikroehlektronika.
- Journal Page Range
- 279-281
- CODEN
- MKETA
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 17023165
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRON BEAMS; HIGH TEMPERATURE; HOLES; KEV RANGE 10-100; MIS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; LEPTON BEAMS; MOBILITY; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- Short note.