Published November 2001 | Version v1
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Peltier effect of superconductor-semiconductor mesoscopic device

Creators

  • 1. Abdus Salam International Centre for Theoretical Physics, Trieste (Italy)
  • 2. Physics Department, Faculty of Science, Cairo University, Beni-Suef (Egypt)
  • 3. Engineering Physics and Mathematics Department, Faculty of Engineering, Ain-Shams University, Abbasia, Cairo (EG)

Description

The heat current density is derived for superconductor-Semiconductor-Superconductor mesoscopic device by using WKB method. A numerical calculation is performed for the heat current at different barrier strength and bias voltages. Our results show that such mesoscopic devices could be used as local electron gas thermometers. (author)

Availability note (English)

Available from INIS in electronic form

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Additional details

Publishing Information

Imprint Pagination
8 p.
Report number
IC--2001/163

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
33017186
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CURRENT DENSITY; ELECTRONIC STRUCTURE; HEAT TRANSFER; INTERFACES; NUMERICAL SOLUTION; SEMICONDUCTOR DEVICES; SUPERCONDUCTING DEVICES; TEMPERATURE DEPENDENCE; TUNNEL EFFECT; WKB APPROXIMATION
Descriptors DEC
ENERGY TRANSFER

Optional Information

Notes
12 refs, 3 figs