Published June 2004
| Version v1
Journal article
High efficiency gettering of Au in Si(1 1 1) by MeV C implantation
Description
A study of MeV C implantation induced effects on gettering of Au (2.2 x 1015 cm-2), implanted into Si(1 1 1), has been carried out using Rutherford backscattering spectrometry. A 2 h anneal in Ar at 850 deg. C has been found to result in a gettering efficiency close to 55%. It increases beyond 80% with a further 2 h anneal at 900 deg. C. The C dose (0.3-1.5 x 1016 cm-2) dependence of Au gettering is also presented and discussed
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2003.12.005;
- PII
- S0168583X03022419;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 217
- Journal Issue
- 4
- Journal Page Range
- p. 578-582
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Syrian Arab Republic
- INIS RN
- 35071056
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARGON; DEFECTS; GETTERING; GOLD; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON
- Descriptors DEC
- ELEMENTS; FLUIDS; GASES; HEAT TREATMENTS; METALS; NONMETALS; RARE GASES; SEMIMETALS; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.