Published March 15, 2000
| Version v1
Journal article
Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
- 1. Research School COBRA, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands (Netherlands)
- 2. Research School CPS, Cyclotron Laboratory, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands (Netherlands)
Description
Strain in and around pyramidal InAs/GaAs quantum dots (QD's) fabricated by molecular-beam-epitaxy influences the density of states of the confined charge carriers. The presence of strain in QD's is required to explain their optical properties. In this paper MeV ion-channeling experiments are presented which provide evidence for the presence of strain in and around InAs QD's in GaAs. The small dimensions of the QD's (typical height 4 nm) and the presence of a wetting layer complicate the interpretation of channeling measurements, but our experiments show that extended strain fields around the QD's induce ion steering which accounts for the observed channeling behavior
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.61.8270;
- PII
- S0163-1829(00)16711-6;
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 61
- Journal Issue
- 12
- Journal Page Range
- p. 8270-8275
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35062217
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE CARRIERS; ENERGY-LEVEL DENSITY; INDIUM ARSENIDES; ION CHANNELING; LAYERS; MEV RANGE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM DOTS; STRAINS; STRESSES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHANNELING; CRYSTAL GROWTH METHODS; ENERGY RANGE; EPITAXY; INDIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Notes
- (c) 2000 The American Physical Society