Published July 31, 2007 | Version v1
Journal article

Electrical and optical properties of electroluminescent device using nanocrystalline silicon

  • 1. Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama 350-0394 (Japan)
  • 2. Department of Electrical and Electronic Engineering, Tokyo Denki University, 2-2 Kandanishiki-cho, Chiyoda-ku, Tokyo 101-8457 (Japan)

Description

We have focused on improving luminescent intensity and reducing direct current (DC) voltage of a nanocrystalline silicon (nc-Si) particle based electroluminescent (EL) device. Nc-Si particles with a size of 3.0 nm dispersed in ethanol were utilized as the luminous layer of the EL device. The EL device could be efficiently injected with carriers (electrons and holes) in the nc-Si region at a low DC voltage of 2.5 V. The injection of carriers resulted in red luminescence that was clearly visible to the naked eye. This was achieved at a low DC voltage by tuning the thickness of the oxide layer surrounding nc-Si particles

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.04.018

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.04.018;
PII
S0040-6090(07)00529-9;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
20-21
Journal Page Range
p. 7990-7993
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39069146
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTALS; ELECTROLUMINESCENCE; ETHANOL; LAYERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PARTICLES; SILICON; SPUTTERING
Descriptors DEC
ALCOHOLS; ELEMENTS; EMISSION; HYDROXY COMPOUNDS; LUMINESCENCE; ORGANIC COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.