Published 1997 | Version v1
Miscellaneous Metadata-only

Silicon and tungsten melting on the border of thin films of W and Si

Creators

  • 1. Instytut Technologii Materialow Elektronicznych, Warsaw (Poland)

Description

Multilayer system W/Si have been obtained on oxidized Si substrate by means magnetron spraying. Then samples were heated in 950 C. Created structures and processes occurring at the films boundary e.g. melting, diffusion, silicides formation have been observed by means of RBS method. 6 refs, 1 fig

Part of:
Materials of 6. Scientific Conference on Electronic Technology. Vol. 1-2

Additional details

Additional titles

Original title (Polish)
Stapianie krzemu i wolframu na granicy cienkich warstw W i Si

Publishing Information

Imprint Title
Materials of 6. Scientific Conference on Electronic Technology. Vol. 1
Imprint Pagination
[1506 p.].
Journal Page Range
p. 158-161.

Conference

Title
6. Scientific Conference on Electronic Technology.
Original Conference Title
6. Konferencja Naukowa Technologia Elektronowa
Dates
6-9 May 1997.
Place
Krynica (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28072656
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
MEETINGS; MELTING; SILICON; THIN FILMS; TUNGSTEN; TUNGSTEN SULFIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FILMS; METALS; PHASE TRANSFORMATIONS; SEMIMETALS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS

Optional Information

Notes
Imprint:Materialy 6. Konferencji Naukowej Technologia Elektronowa. T. 1.