Horizontally-connected ZnO-graphene hybrid films for multifunctional devices
Creators
- 1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
- 2. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of)
Description
Highlights: • We designed horizontally-connected ZnO and graphene hybrid nanofilms with improved flexibility for multifunctional nanodevices including high performance TFTs. • The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 102, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 105 cycles of 5-mm radius bending. • The hybrid thin film transistors exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm2/V s and on-off ratio of 107. - Abstract: Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 102, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 105 cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm2/V s and on-off ratio of 107.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2016.04.068Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2016.04.068;
- PII
- S0169-4332(16)30809-1;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 379
- Journal Page Range
- p. 238-241
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48021449
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BENDING; CHEMICAL VAPOR DEPOSITION; DEPOSITS; ELECTRON MOBILITY; FLEXIBILITY; GRAPHENE; LAYERS; PERFORMANCE; PHOTOCURRENTS; PHOTODETECTORS; SENSITIVITY; SURFACES; THIN FILMS; TRANSISTORS; VAPORS; ZINC OXIDES
- Descriptors DEC
- CARBON; CHALCOGENIDES; CHEMICAL COATING; CURRENTS; DEFORMATION; DEPOSITION; ELECTRIC CURRENTS; ELEMENTS; FILMS; FLUIDS; GASES; MECHANICAL PROPERTIES; MOBILITY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; SEMICONDUCTOR DEVICES; SURFACE COATING; TENSILE PROPERTIES; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.