Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves

Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (T e) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, T e is found to depend on the spatial profiles of the power absorption, which suggests that T e in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile