Published November 1997
| Version v1
Journal article
Computer simulation and radiation hardening of power devices to protect against failures induced by heavy ions
- 1. Montpellier-2 Univ., 34 (France)
- 2. Universite des Antilles et de la Guyane, Pointe-a-Pitre, Guadeloupe (France)
Description
Power devices such as MOSFETSs and IGBTs, include parasitic structures that can give rise to destructive failures such as breakdown and latch-up. To determine a suitable strategy for device radiation hardening, simulation software like MEDICI-2D can be used to model the effects of technological modifications and device parameters that are difficult to measure experimentally. (authors)
Additional details
Additional titles
- Original title (French)
- Simulation numerique et durcissement de composants de puissance aux defaillances induites par ions lourds
Publishing Information
- Journal Title
- REE. Revue de l'Electricite et de l'Electronique
- Journal Issue
- no.10
- Journal Page Range
- p. 79-82.
- ISSN
- 1265-6534
- CODEN
- REELF3
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 29030041
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGE DENSITY; COMPUTERIZED SIMULATION; ELECTRONIC CIRCUITS; ENERGY DEPOSITION; HARDENING; HEAVY IONS; MOSFET; THYRISTORS
- Descriptors DEC
- CHARGED PARTICLES; FIELD EFFECT TRANSISTORS; IONS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS
Optional Information
- Notes
- 9 refs.