Published May 2006 | Version v1
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Systematic study of influence of growth parameters on island morphology during molecular beam epitaxy growth: A Monte Carlo study

  • 1. Department of Physics, Tribhuvan University, Patan Campus, Patan Dhoka (Nepal) and Abdus Salam International Centre for Theoretical Physics, Trieste (Italy)
  • 2. Department of Physics Sung Kyun Kwan University, Suwon (Korea, Republic of)

Description

We have made a systematic study of influence of diffusion flux ratio (D/F), diffusional anisotropy (DA) and sticking anisotropy (SA) on island morphology to show the influence of each growth parameter on island morphology in presence of the other growth parameters. Our results show that the influence of D/F ratio and DA on island morphology depends on the sticking anisotropy of the adatoms. At the intermediate anisotropic case, increase in D/F ratio results in transition of the island morphology from 1d nature to 2 d nature. In anisotropic diffusion case, D/F ratio can change the growth direction of the island morphology. We also find that only sticking anisotropy is not sufficient to produce elongated islands, low D/F ratio is also essential. (author)

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Available from INIS in electronic form; Also available at: http://www.ictp.it

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Additional details

Identifiers

Publishing Information

Imprint Pagination
17 p.
Report number
IC--2006/026

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38002815
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANISOTROPY; CRYSTAL GROWTH; MAGNETIC ISLANDS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHOD; MORPHOLOGY
Descriptors DEC
CALCULATION METHODS; CRYSTAL GROWTH METHODS; EPITAXY; MAGNETIC FIELD CONFIGURATIONS

Optional Information

Notes
31 refs, 9 figs