Published January 1, 2018 | Version v1
Journal article Metadata-only

Sensitivity of PbSnTe:In films to the radiation of free electron laser

Creators

  • 1. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation)
  • 2. Budker Institute of Nuclear Physics of the Siberian Branch of the Russian Academy of Sciences, Lavrentyev Avenue 11, Novosibirsk 630090 (Russian Federation)

Description

The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1–xSnxTe:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70–240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/946/1/012016

Additional details

Identifiers

DOI
10.1088/1742-6596/946/1/012016;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
946
Journal Issue
1
Journal Page Range
[8 p.]
ISSN
1742-6596

Conference

Title
32. International Conference on Interaction of Intense Energy Fluxes with Matter
Acronym
ELBRUS 2017
Dates
1-6 Mar 2017
Place
Elbrus, Kabardino-Balkaria (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52069787
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
EXPERIMENTAL DATA; FREE ELECTRON LASERS; LEAD TELLURIDES; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS; SENSITIVITY; THIN FILMS; TIN TELLURIDES; WAVELENGTHS
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; FILMS; INFORMATION; LASERS; LEAD COMPOUNDS; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS