Stacked Fresnel Zone Plates for High Energy X-rays
Creators
- 1. ESRF, B.P. 220, 6 rue Jules Horowitz, 38043 Grenoble (France)
- 2. Russian Research Centre Kurchatov Institute, 123182 Moscow (Russian Federation)
- 3. Institute of Microelectronics Technology RAS, 142432 Chernogolovka, Moscow region (Russian Federation)
Description
A stacking technique was developed in order to increase focusing efficiency of Fresnel zone plates (FZP) at high energies. Two identical Si chips each of which containing 9 FZPs were used for stacking. Alignment of the chips was achieved by on-line observation of the moire pattern. The formation of moire patterns was studied theoretically and experimentally at different experimental conditions. To provide the desired stability Si-chips were bonded together with slow solidification speed epoxy glue. A technique of angular alignment in order to compensate a linear displacement in the process of gluing was proposed. Two sets of stacked FZPs were experimentally tested to focus 15 and 50 keV x rays. The gain in the efficiency by factor 2.5 was demonstrated at 15 keV. The focal spot of 1.8 μm vertically and 14 μm horizontally with 35% efficiency was measured at 50 keV. Forecast for the stacking of nanofocusing FZPs was discussed
Additional details
Identifiers
- DOI
- 10.1063/1.2436230;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 879
- Journal Issue
- 1
- Journal Page Range
- p. 998-1001
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 9. international conference on synchrotron radiation instrumentation
- Dates
- 28 May - 2 Jun 2006
- Place
- Daegu (Korea, Republic of)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39069515
- Subject category
- S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM OPTICS; BEAM PRODUCTION; EFFICIENCY; FOCUSING; GAIN; KEV RANGE; PHOTON BEAMS; SILICON; STABILITY; X RADIATION
- Descriptors DEC
- AMPLIFICATION; BEAMS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- (c) 2007 American Institute of Physics