Properties of buried insulating layers in silicon formed by high dose implantation at 60 keV

Buried silicon nitride and oxynitride layers were formed in silicon by ion beam synthesis at 60 keV. In all cases monocrystalline silicon top layers were found already after implantation. Their defect density is reduced strongly after annealing at 12000C which leads also to narrowing of the interregions silicon/compound layer. Silicon oxynitride remains amorphous after annealing. The electrical resistivity of the buried layer is in the range of 1015-1016 Ωcm. The quality of the layer systems with silicon oxynitride depends on the implantation sequence of the species. The long range order of polycrystalline silicon nitride may be strongly reduced by ion implantation. (orig.)