Published February 1989
| Version v1
Journal article
Computer controlled drifting of Si(Li) detectors
- 1. Lawrence Berkeley Lab., Berkeley, CA (USA)
Description
A relatively inexpensive computer-controlled system for performing the drift process used in fabricating Si(Li) detectors is described. The system employs a small computer to monitor the leakage current, applied voltage and temperature on eight individual drift stations. The associated computer program initializes the drift process, monitors the drift progress and then terminates the drift when an operator set drift time has elapsed. The improved control of the drift with this system has been well demonstrated over the past three years in the fabrication of a variety of Si(Li) detectors. A few representative system responses to detector behavior during the drift process are described
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 36
- Journal Issue
- 1
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 185-189
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- IEEE nuclear science symposium.
- Dates
- 9-11 Nov 1988.
- Place
- Orlando, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20057549
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTER CODES; DRIFT CHAMBERS; FABRICATION; LEAKAGE CURRENT; LI-DRIFTED SI DETECTORS; MONITORING; ON-LINE CONTROL SYSTEMS; SILICON; SURFACE BARRIER DETECTORS
- Descriptors DEC
- CONTROL SYSTEMS; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; MULTIWIRE PROPORTIONAL CHAMBER; ON-LINE SYSTEMS; PROPORTIONAL COUNTERS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SI SEMICONDUCTOR DETECTORS
Optional Information
- Secondary number(s)
- CONF-881103--.