Published 2014 | Version v1
Journal article

Structural and transport investigation of Cd1x Mnx Te semi magnetic semiconductor system

  • 1. National Center for Radiation Research and Technology, Solid State Department, P.O. Box 29, Nasr City, Cairo (Egypt)
  • 2. Al Azhar University, Faculty of Science, Physics Department, Cairo (Egypt)

Description

Cd1x Mnx Te (x= 0.1, 0.2 and 0.3) have been studies. Structural characterization was carried out by X-ray diffraction. The Rietveld program reveals the formation of nano disordered structure. The lattice parameters were found to decrease by the increasing of Mn content. The dc and Ac conductivities of the prepared semi magnetic semiconductor, were measured in a wide range of temperature and frequency. The obtained data reveal that σAc (Greek Small Letter Omega) obey the relation, σAc (A Greek Small Letter Omega)=A ωsS. The Ac conductivity shows frequency dependent and nearly temperature independent character. The correlated barrier hopping conduction mechanism is applied and single electron hopping between D+ center (Mn+) and D0 (chalcogen atom) is assumed to take place. The magnetic susceptibility was investigated in the temperature range of (170-300) K revealing the paramagnetic behavior described by the Cune Weiss low

Additional details

Publishing Information

Journal Title
Journal of Radiation Research and Applied Sciences
Journal Volume
7
Journal Issue
1
Journal Page Range
p. 55-63
ISSN
1687-8507
CODEN
JRRAS