MOCVD growth and characterization of BiFeO3-Bi(Zn1/2Ti1/2)O3 ferroelectric films

xBi(Zn1/2Ti1/2)O3-(1 - x)BiFeO3 films with x = 0-0.68 were prepared on (1 0 0)SrTiO3 and (1 0 0)cSrRuO3||(1 0 0)SrTiO3 substrates by pulsed metalorganic chemical vapor deposition. Effects of the composition, x, on the constituent phases and their electrical properties were systematically investigated. {1 0 0}-oriented epitaxial films were ascertained to be grown and three series of peaks with x = 0-0.23 (Peak A), x = 0.15-0.44 (Peak B) and x = 0.23-0.68 (Peak C) were observed. Leakage current density monotonously decreased with increasing x. On the other hand, maximum relative dielectric constant of the films was observed at x = 0.20, almost corresponding to the compositional boundary of the x between Peaks A and C.