Published 2004 | Version v1
Journal article Metadata-only

Defect formation in GaAs and InGaAs epitaxial layers obtained by low-temperature molecular-beam epitaxy

Creators

  • 1. Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation)
  • 2. SO RAN, Inst. Fiziki Poluprovodnikov, Novosibirsk (Russian Federation)
  • 3. Sibirskij Fiziko-Tekhnicheskij Inst., Tomsk (Russian Federation)

Description

Influence of flow densities of group III and IV elements on surface relief and internal structure of InGaAs and GaAs layers grown by the method of molecular-beam epitaxy at low temperatures was studied using atomic force and transmission electron microscopy. It is shown that growth defects are formed in the layers, i.e. volcano-like pits and microdrops on the basis of group III elements on the surface and dislocations, packing defects, microtwins, phase microheterogeneities in the bulk

Abstract (Russian)

C помощью атомно-силовой и просвечивающей электронной микроскопии исследовано влияние плотности потоков элементов III и IV групп на рельеф поверхности и внутреннюю структуру слоев InGaAs и GaAs, выращенных методом молекулярно-лучевой эпитаксии при низких температурах. Показано, что в таких слоях формируются ростовые дефекты: на поверхности - вулканоподобные ямки, микрокапли на основе элементов III группы; в объеме - дислокации, дефекты упаковки, микродвойники, фазовые неоднородности

Additional details

Additional titles

Original title (Russian)
Образование дефектов в эпитаксиальных слоях GaAs и OnGaAs, выращенных методом молекулярно-лучевой эпитаксии при низких температурах

Publishing Information

Journal Title
Zhurnal Strukturnoj Khimii
Journal Volume
45
Journal Page Range
p. 96-101
ISSN
0136-7463
CODEN
ZSTKAI

Conference

Title
10. seminar of Asiatic-Pacific academy of materials; 3. Materials Conference of Siberia - Science and technology of nanostructurized materials
Original Conference Title
X seminar Aziatsko-tikhookeanskoj akademii materialov i III Konferentsiya Materialy Sibiri - Nauka i tekhnologiya nanostrukturirovannykh materialov
Dates
2-6 Jun 2003
Place
Novosibirsk (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
37094642
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; DEFECTS; GADOLINIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SURFACES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXY; GADOLINIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; PNICTIDES; RARE EARTH COMPOUNDS

Optional Information

Notes
10 refs., 5 figs.