Electron paramagnetic resonance in neutron-doped semiconductors with changed isotope composition

Potentialities of the EPR method during study and control of neutron transmutation doping of germanium silicon and silicon carbide semiconductor materials are considered. It is shown that the EPR method permits direct control over radiation-induced defects annealing in semiconductor materials subjected to neutron irradiation and tracing the recovery of EPR signals from minor donors in the course of defects annealing. The EPR method can be used for separate recording of isolated donors and exchange-bound pairs, triplets and large clusters of donor atoms. It is shown that neutron doping results in uniform enough distribution of arsenic donors in germanium crystal